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Saturday, 28 December 2019

Improved pulse-width modulation scheme for T-type multilevel inverter


ABSTRACT: 

In recent times, reduced switch count multilevel inverter (RSC-MLI) has become an emerging area of research in power electronic converters. To control these RSC-MLI topologies, various novel modulation schemes are reported. Multi reference is one of such modulation scheme reported for various RSC topologies, such as T-type. However, the performance of this conventional scheme results in high total harmonic distortion (THD) in line voltages, when compared with the conventional level shifted pulse-width modulation scheme. This observation is clearly presented in this study and the reason for its degraded THD performance has been deeply discussed. To alleviate this problem, a modified multi-reference dual-carrier modulation technique with multiple references and two carriers is proposed. To implement this proposed modulation technique, an alternate carrier and modulation signals arrangement with multiple carriers and single reference is also presented. Finally, a comparative THD performance of the proposed and conventional modulation schemes is carried out on a five-level T-type MLI and obtained simulation results are validated experimentally.

SOFTWARE: MATLAB/SIMULINK

CIRCUIT DIAGRAM:




Fig. 1 Five-level T-type topology

EXPERIMENTAL RESULTS: 


Fig. 2 Performance analysis of multi-reference modulation scheme on five-level T-type configuration with ma = 0.95 and fc = 1500 Hz (a) Phase voltage, line voltage and load current, (b) Respective harmonic spectra, (c) Comparative harmonic performance of conventional multi-reference modulation scheme for five-level T-type MLI and LSPWM for five-level CHB





Fig. 3 Comparison of LSPWM-OPD and multi-reference modulation scheme with ma = 0.95 and fc = 1500 Hz
(a) Conventional multi-reference modulation scheme for a five-level T-type, (b) Comparison of position of carriers in multi-reference modulation in terms of LSPWM-OPD scheme,
(c) Position of carriers in LSPWM-OPD modulation scheme, (d) Phase and line harmonic spectra of LSPWM-OPD for a five-level CHB


Fig. 4 Modified multi-reference dual-carrier modulation scheme for a five-level T-type topology with ma = 0.95 and fc = 1500 Hz (a) Proposed scheme, (b) Carriers of proposed scheme in terms of LSPWM-IPD, (c) Phase voltage, line voltage and load current, (d) Respective harmonic spectra

CONCLUSION:

In this paper, the poor harmonic performance of the conventional multi-reference modulation method for T-type MLI topology is analysed. To address this problem, a modified multi-reference dual-carrier modulation is proposed. The performance of the proposed modulation scheme is identical to LSPWM-IPD technique which is the best PWM technique with lowest THD value available. Further, to implement the proposed PWM scheme, an alternate carrier and modulation signals arrangement is also proposed which can be easily realisable on digital platforms. The performance of the proposed modulation schemes is evaluated with simulation and experimental studies on a five-level T-type MLI topology. The experimental studies are in good agreement with simulation studies and also verify the superior performance of the proposed schemes over conventional modulation schemes. A generalisation of the modified reduced carrier modulation to implement any number of levels for a T-type is presented with the help of a flowchart.

REFERENCES:

[1] Singh, B., Singh, B.N., Chandra, A., et al.: ‘A review of three-phase improved power quality AC–DC converters’, IEEE Trans. Ind. Electron., 2004, 51, (3), pp. 641–660
[2] Franquelo, L.G., Rodriguez, J., Leon, J.I., et al.: ‘The age of multilevel converters arrives’, IEEE Ind. Electron. Mag., 2008, 2, (2), pp. 28–39
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[4] Rodriguez, J., Lai, J.-S., Peng, F.Z.: ‘Multilevel inverters: a survey of topologies, controls, and applications’, IEEE Trans. Ind. Electron., 2002, 49, (4), pp. 724–738, doi: 10.1109/TIE.2002.801052
[5] McGrath, B.P., Holmes, D.G.: ‘Multicarrier PWM strategies for multilevel inverters’, IEEE Trans. Ind. Electron., 2002, 49, (4), pp. 858–867